Abstract
In this paper a general description of Monte Carlo simulation algorithm for modelling of exposure and development processes in the case of electron beam lithography (EBL) is presented. Experimental results and data obtained through Monte Carlo and analytical computer simulation tools of exposure and development processes for electron beam lithography are compared and analyzed. Results show that the simulation tools used predict with good accuracy the critical dimensions in the range of 500 nm and the profiles of the developed patterns in the case of multilayer structure samples containing a YBCO type High Temperature Superconducting layer.
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