Abstract
We present a detailed study on the optimization of rapid thermal annealing (RTA) on GaN-based light emitting diodes (LEDs). 14mil×28mil GaN-based LED chips are fabricated with indium tin oxide (ITO) layer treated by RTA under various temperatures and times. Through the optical and electrical property analyses of ITO film, it is found that the transmittance and sheet resistance are improved after RTA process due to the better ITO crystallization and bigger grain size, compared with ITO treated by conventional furnace annealing. By employing electroluminescence measurement for the LED chips with RTA treatment, the forward voltage is found to be low as a result of low sheet resistance and contact resistance, and light output power (LOP) is high due to high ITO transmittance and good current density uniformity. Under RTA temperature of 550°C and time of 3min, the optimized LOP and forward voltage at 60mA injection current are 71.2mW and 2.97V, respectively. Moreover, the reliability of the chips with RTA is better than those with furnace annealing.
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