Abstract
Laser-induced chemical vapour deposition of silicon films on SiO2/Si (1 0 0) and Si (1 0 0) substrates was studied using ArF laser irradiation of silane/argon gas mixture in parallel to the substrate. The optimal deposition conditions were specified by examination of film morphology at a wide range of irradiation and process parameters. At optimal conditions, specular films were obtained with no powder formation. The effect of deposition parameters, such as laser energy and repetition rate, on the deposition rate and the related film quality, was investigated.
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