Abstract
Hydrogenated amorphous silicon (a-Si:H) thin films have been prepared by DC magnetron sputtering, and the effect of sputtering power, the hydrogen flow rate on deposition rate and the optical properties of a-Si:H thin films have been investigated. The hydrogen content (C<sub>H</sub>) of the films was calculated by Fourier transform infrared (FTIR) spectroscopy method, the maximum C<sub>H</sub> was obtained at 11at. %,and a bandgap of a-Si:H thin films was changed from 1.43 to 2.25 eV with different C<sub>H</sub>. It was found that the refractive index (n) and extinction coefficient (k) of the prepared films decreased with the increase of C<sub>H</sub>. The results provided experimental basis for preparing a-Si:H thin films with special performance and structure .
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