Abstract
The influence of lateral asymmetry on the electro-optic effect of a Ti:LiNbO3 Y-junction waveguide for integrated optical devices is investigated. The characteristic discrepancy of a Y junction related to the photolithographic process constraint is simulated. It is found that the half-wave voltage will increase 50% if the width of waveguide is 4 μm and the branch angle is rounded by a circular shape with a radius of about 5 μm. Also, if the Y branch has a lateral offset of 2.5 μm with respect to the central axis of the input waveguide, the extinction ratio will decay to 5 dB. © 1992 John Wiley & Sons, Inc.
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