Process Induced Instability and Reliability Issues in Low Temperature Poly-Si Thin Film Transistors

Chih-Yang Chen,Tan-Fu Lei,Jam-Wen Lee,Kuan-Lin Yeh,Ming-Shan Shieh,Shen-De Wang,Hsiao-Yi Lin,Wei-Cheng Chen

doi:10.1109/relphy.2006.251338

Process Induced Instability and Reliability Issues in Low Temperature Poly-Si Thin Film Transistors

Chih-Yang Chen, Tan-Fu Lei + Show 6 more

https://doi.org/10.1109/relphy.2006.251338

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Publication Date: Mar 1, 2006

Citations: 5

Affiliation: National Yang Ming Chiao Tung University, National Applied Research Laboratories, AU Optronics (Taiwan)

#Low Temperature Poly-Si Thin Film #Temperature Poly-Si Thin Film Transistors + Show 8 more

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Abstract

We investigated the impact of plasma process on the devices' performance and reliability degradation of low temperature poly-Si thin film transistors (LTPS TFTs). LTPS TFTs with different antenna areas were used to study the effects of the plasma etching process on the devices. The larger TFT antenna area, the more performance instability occurs. The reliability of LTPS TFTs with large antenna areas was found to be degraded from gate bias stress and hot carrier stress.

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