Abstract
AbstractWe have associated threshold current density of 1.3 μm InAs quantum dot (QD) laser diodes with the photoluminescence (PL) peak intensity of as‐grown wafers. These InAs QD laser wafers with stacking structure of 5 and 10 QD layers were grown by molecular beam epitaxy. PL measurements have carried out by high power excitation at room temperature. The PL peak intensity from ground state of InAs QDs has been inversely proportional to the threshold current density. Additionally, enhancement of PL peak intensity by increase in stacked QD layers has been corresponded to increase in maximum modal gain of QD laser. These results indicate that PL characterization by high power excitation is useful to estimate quality of as‐grown wafers without fabrication of QD laser diode. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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