Abstract
In this paper, the process effects of SiGe/Si multi quantum well (MQW) stack is presented in terms of its 1/f noise performance in an intrinsic thermal detector device. In particular, boron (B) doping in SiGe quantum wells and carbon (C) delta layer at SiGe/Si interfaces are analyzed by presenting the 1/f noise voltage power spectral densities. The results indicate that 1/f noise performance can be further improved by carbon delta layers while doping in SiGe quantum wells has no significant effect. Effects of the bias voltage and the pixel size of the thermistor are obtained very much similar to the expected trend. The overall achievements proves that the desired TCR and resistance values for high performance SiGe/Si MQW thermistor material can be achieved with a desired 1/f noise performance by the introduction of carbon delta layer at SiGe/Si interfaces and in-situ doping of the SiGe layers in the MQW stack.
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