Abstract
The CMOS-compatible ferroelectrics (FE) based on HfO 2 are being widely explored for emerging memory, logic, and neuromorphic devices [1]. While the applications hinge on the dynamic switching of the FE, process optimization often relies on information obtained from measurement of the quasi-static polarization-field (P-E) hysteresis loops [2]. We have recently been refining methods for characterizing the polarization reversal dynamics of polycrystalline FEs, such as Hafnium Zirconate (HZO). Because of the close agreement between the nucleation limited switching (NLS) model and measurements, detailed physical information such as minimum switching time and activation field distributions can be extracted from polarization reversal measurements vs. pulse amplitude and duration [3]. This characterization has been successfully applied to the prediction of FE switching dynamics under arbitrary voltage waveforms [4]. Here, we utilize this method to study the dependence of the switching dynamics of FE HZO formed by atomic layer deposition (ALD) vs. electrode metal and post deposition anneal temperature.
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