Abstract
Bias temperature instabilities (BTI) reliability is investigated in advanced dielectric stacks. We show that mobility performance and NBTI reliability are strongly correlated and that they are affected by the diffusion of nitrogen species N at the Si interface. PBTI, more sensitive to bulk oxide traps, is strongly reduced in very thin dielectric films. Reducing the metal gate thickness favors the reduction of mobility degradations and NBTI, but, also strongly enhances PBTI, due to a complex set of reactions in the gate oxide. Trade off must be found to obtain a great trade off between device performance and reliability requirements.
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