Abstract

Process characterization of a novel plasma based conformai doping technique was conducted for arsenic dopant in terms of silicon amorphization, fin integrity, doping conformality, sheet resistance and main effect of doping process parameters. Doping conformality, the ratio of doping at fin sidewall and top, was characterized by cross-section transmission electron spectroscopy (XTEM) and top-down secondary ion mass spectroscopy (SIMS) on fin structures. The residual post-anneal damage was also evaluated by XTEM. Sheet resistance (Rs) was used for studying dopant activation. The effect of main doping process parameters on thermal wave (TW), sheet resistance (Rs) and silicon fin amorphization was also studied.

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