Process, assembly and electromigration characteristics of glass interposer for 3D integration

Abstract

Glass interposer is proposed as a superior alternative to organic and silicon-based interposers for 3DIC packaging in the near future. Because glass is an excellent dielectric material and could be fabricated with large size, it provides several attractive advantages such as excellent electrical isolation, better RF performance, better feasibility with CTE and most importantly low cost solution. In this paper, we investigated the EM performance of Cu RDL line with glass substrate. Three different physical properties of glass materials were used for studying the EM performance of Cu RDL line. The used testing conditions are under 150~170 °C and 300~500mA. The glass type material with best performance was applied for glass interposer process integration and assembly investigation. Therefore, a wafer-level 300mm glass interposer scheme with topside RDLs, Cu TGVs, bottom side RDLs, Cu/Sn micro-bump and PBO passivation has been successfully developed and demonstrated in the study. The chip stack modules with glass interposer were assembled to evaluate their electrical characteristics. Pre-conditioning test was performed on the chip stacking module with the glass interposer to assess the reliability of the heterogeneous 3D integration scheme. All the results indicate that the glass interposer with polymer passivation can be successfully integrated with lower cost processes and assembly has been successfully developed and demonstrated in the study.