Proceedings of the Tenth International Conference on High Pressure Semiconductor Physics (HPSP‐X)

Abstract

AbstractThe Tenth International Conference on High Pressure Semiconductor Physics (HPSP‐X) was held as a satellite meeting of the International Conference on the Physics of Semiconductors in Guildford from 5 to 8 August 2002. It brought together scientists and engineers who use high pressure to study the science and technology of semiconductors. The HPSP‐X conference reviewed the latest issues and developments in the physics of both bulk and low‐dimensional semiconductor materials and devices under pressure. It covered all aspects of fundamental and applied high‐pressure semiconductor research, including experimental and theoretical investigations under isotropic or anisotropic stress conditions. Topics such as electronic structures, vibrational and optical properties, transport phenomena, defect states, phase transitions, and novel materials or structures are included in this issue.Following the meetings HPSP‐VII in Schwäbisch Gmünd, phys. stat. sol. (b) 198, No. 1 (1996); HPSP‐VIII in Thessaloniki, phys. stat. sol. (b) 211, No. 1 (1998), and HPSP‐IX in Sapporo, phys. stat. sol. (b) 223, No. 1/2 (2001), the proceedings of this successful conference series are published in physica status solidi for the fourth time.