Abstract
The current space-dependent due to recombination, and likewise the concentration of minority carriers exceeding equilibrium can be described as function series in a particular case when the carrier concentration is zero at one boundary of the examined region. By superimposing two series where this requirement is fulfilled at the two opposite boundaries, the general solutions of current and the minority carrier concentration are demonstrated. Using the general solution of the current, the one-lump Linvill model of a region with arbitrary doping profile is determined. As an example of this method, the one-lump model of the p-n-p lateral transistor was developed. By calculating the currents in the model arms, the d.c. current gain, the frequency limit fT and Ic max are determined.
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