Proceedings of the PASPS V Conference Held in August 2008 in Foz do Iguaçu, Brazil

Abstract

In recent years, spin-related effects have emerged as the key ingredient underlying many fundamental spin-dependent phenomena in nanoscale condensed-matter systems. In this context, the 5th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS V) took place in the city of Foz do Iguacu, Brazil, on August 3–6, 2008. PASPS V followed the successful series of conferences held in Japan (Sendai, 2000, 2006), Germany (Wurzburg, 2002), and The United States (Santa Barbara, 2004). Over the years the PASPS series has stimulated the crossfertilization between the fields of semiconductor and magnetic nanosystems and has become the ideal forum for identifying (new) challenges, open questions and opportunities in spintronics. The fifth edition of PASPS has followed this trend thus focusing on fundamental spin-dependent phenomena arising from spin-related effects in semiconductors and magnetic nanostructures. The scientific program of PASPS V has highlighted the latest theoretical and experimental developments in new semiconductor spintronic materials and devices, as well as advances in metallic magnetoelectronics. Many state-of-the-art developments on relevant themes in the field were presented and extensively discussed during the conference. These include: ferromagnetic III–V semiconductors (control of magnetic properties, anisotropy), di-