Abstract
The application of the crucibleless method for the growth of dielectric crystals from the melt is studied. This method is a variant of crystal growth in an axial heat flux close to the phase interface (AHP method). A special AHP-heater placed in the melt close to the growing crystal allowed the creation of a planar interface over practically the whole cross section. This scheme gave an opportunity to control the temperature gradient in the melt close to the interface over a wide range (from 10 up to 200 K/cm). Problems of crystal growth: holding of the melt layer with the required thickness by surface tension forces; supply of charge to the AHP-heater and feeding melt to the growing crystal; adjustment of crystallizer are considered. The conditions of morphological instability of the interface are found for LBO crystal. It was determined that crystallographic direction of facets bounding the cells is the same as those forming the crystal habitus.
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