Abstract
Relaxed, epitaxial SiGe layers with low densities of threading dislocations are grown by linearly grading the Ge composition. However, such compositionally graded SiGe layers (virtual substrates) often result in a cross hatch surface morphology which affects subsequent device processing. Here, we report on high-resolution channeling-contrast-microscopy (CCM) measurements on such virtual substrates grown by gas-source molecular-beam epitaxy and low-pressure chemical vapor deposition. A two-MeV He+ beam focused to a submicron spot is used in these CCM measurements to obtain both lateral and depth-resolved information on the cross hatch features observed and their association with a slight lattice tilt.
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