Abstract
The hysteresis effects due to electronic-ionic conductivity can be utilized to develop memory devices for information storage and brain-like computing. Halide perovskites-based devices exhibit frequent hysteresis in their current–voltage curves, making them suitable for neuromorphic computing. Despite recent advances in this field, the exact mechanism behind switching between high and low resistive states in halide perovskite memristors is still under debate. This study aims to understand the switching mechanism and charge transport in the ITO/MAPbBr3/Au device’s geometry by analyzing their SET-RESET states through current–voltage characteristics and impedance spectroscopy at different applied biases and under different light intensities. A clear shift in the SET voltage due to increased light power correlates with the electronic–ionic coupling and ion migration. In the impedance spectroscopy measurement, the AC conductivity shows a negative slope at the SET state, especially at the low-frequency regime due to the ion-induced voltage, which gets screened by photogenerated charge carriers.
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