Abstract

As an important supplementary material to graphene in the optoelectronics field, molybdenum disulfide (MoS2) has attracted attention from researchers due to its good light absorption capacity and adjustable bandgap. In this paper, MoS2 layers are respectively grown on SiO2/Si and sapphire substrates by atmospheric pressure chemical vapor deposition (APCVD). Atomic force microscopy, optical microscopy, and Raman and photoluminescence spectroscopy are used to probe the optical properties of MoS2 on SiO2/Si and sapphire substrates systematically. The peak shift between the characteristic A1g and E12g peaks increases, and the I peak of the PL spectrum on the SiO2/Si substrate redshifts slightly when the layer numbers were increased, which can help in obtaining the layer number and peak position of MoS2. Moreover, the difference from monolayer MoS2 on the SiO2/Si substrate is that the B peak of the PL spectrum has a blueshift of 56 meV and the characteristic E12g peak of the Raman spectrum has no blueshift. The 1- and 2-layer MoS2 on a sapphire substrate had a higher PL peak intensity than that of the SiO2/Si substrate. When the laser wavelength is transformed from 532 to 633 nm, the position of I exciton peak has a blueshift of 16 meV, and the PL intensity of monolayer MoS2 on the SiO2/Si substrate increases. The optical properties of MoS2 can be obtained, which is helpful for the fabrication of optoelectronic devices.

Highlights

  • Graphene has been researched extensively due to its many excellent properties, making it one of the most promising two-dimensional materials [1,2,3]

  • The monolayer MoS2 is a “sandwich” structure, whereby the upper and lower layers are the hexagonal planes composed of sulfur atoms, and the middle is a layer of metal molybdenum atoms

  • The effects of different laser wavelengths, powers, layer number, and substrate on the optical properties of MoS2 are researched by the optical microscopy (OM), Raman spectroscopy (Raman), photoluminescence spectroscopy (PL), and atomic force microscopy (AFM), systematically, to master the luminescence laws

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Summary

Introduction

Graphene has been researched extensively due to its many excellent properties, making it one of the most promising two-dimensional materials [1,2,3]. The layer number and substrate environment would have a great influence on the electronic structure, physical, and optical properties of MoS2, which would affect the performance of the optical device [15]. The effects of different laser wavelengths, powers, layer number, and substrate on the optical properties of MoS2 are researched by the optical microscopy (OM), Raman spectroscopy (Raman), photoluminescence spectroscopy (PL), and atomic force microscopy (AFM), systematically, to master the luminescence laws. Spectral characteristics of monolayer MoS2 on the SiO2/Si and sapphire substrates are each studied; spectral characteristics of MoS2 with different layers on the SiO2/Si and sapphire substrates are tested; subsequently, the spectral properties of MoS2 with different layers under different excitation wavelengths are researched; the optical characteristic laws of MoS2 are summarized, which can help in the fabrication of optoelectronic devices

Experimental Methods
Characterization of Monolayer MoS2 on Sapphire Substrate
Characterization of Different Layers MoS2 on Sapphire Substrate
Findings
Conclusions
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