Abstract
In this work, local electrical properties of the crystallographic defects including V‐defects and trenches in ternary alloy AlGaN and quaternary alloys Al(Ga,In)N with different indium concentration are studied by light‐assisted Kelvin probe force microscopy. This surface sensitive technique is used to reveal the role of these defects as deep level electron traps. The evolution of topography of the layers from AlGaN to indium‐containing alloys is also investigated; it highlights the transformation of step‐flow to three‐dimensional growth mode. It is also shown that at the coalescence boundaries of growth hillocks, defects are generated which act as electrically active electron traps.
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