Abstract
Indacenodithiophene-co-benzothiadiazole (IDTBT) belongs to a class of donor-acceptor polymers, exhibiting high electronic mobility and low energetic disorder. Applying vacuum as dielectric enables us to investigate the intrinsic charge transport properties in IDTBT. Vacuum-gap IDTBT field-effect transistors (FET) show high mobilites approaching 1 cm2V−1s−1. In addition, with increasing dielectric constant of the gate insulators, the mobilites of IDTBT transistors first increase and then decrease. The reason could be attributed to effect of both charge carrier accumulation and the presence of dipolar disorder at the semiconductor/insulator interface induced by polar insulator layer.
Highlights
Conjugated polymers are promising semiconductor materials for flexible electronics, with the advantages of low cost, light weight and solution processability
Studying charge transport in organic semiconductors using FET devices has been challenging because the interfacial effects between semiconductor and gate insulator, including insulator surface roughness, surface energy and surface polarity, is complicated and has a large influence on the electronic properties of semiconductor.[11,12,13]
Our results show that the mobility of the top-gated IDTBT transistors strongly depends on the carrier density as well as the dielectric constant of the gate insulator
Summary
Conjugated polymers are promising semiconductor materials for flexible electronics, with the advantages of low cost, light weight and solution processability. In order to study influence of gate insulators on the charge transport properties of IDTBT FETs, we used the IDTBT films prepared by the same method as the films in the vacuum-gap devices and fabricated top-gated devices using Cytop and P(VDF-TrFE-CFE) as gate insulators.
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