Abstract
We have analysed the vertical transport properties of a GaAs/AlAs short period superlattice as the crossed magnetic field is rotated in the plane of the layers. The rotation of the magnetic field has been used to probe the interface roughness along the different in-plane crystallographic directions. Two maxima separated by 180° in the current intensity have been observed when the magnetic field is rotated through 360°. We interpret our results in terms of anisotropic scattering from elliptical interface defects of which the great axis is along [11̄0] and the minor one along [110].
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
