Probing the electrical performance improvement of FET device based on multilayer MoS2 material

Abstract

The process quality of material and device can be evaluated by the electrical performance. In this paper, the multi-layer MoS2 material and nickel (Ni) metal were used as channel and electrodes of FET device, which can be fabricated by the electron beam lithography and evaporation processes. The morphology, structure, component and spectral characteristic of multilayer MoS2 material and device were characterized by optical microscope, Raman spectrometer and scanning electron microscope (SEM), and the fabrication feasibility was also discussed. Meanwhile, the electronic performance of device was tested and analyzed by probe table and semiconductor parameter analyzer, and the influence of annealing treatment can also be explored. The contact resistance of device decreases after annealing, current switching ratio increase by one order of magnitude, output characteristic curve shows linear, and the electrical performance can also be improved, which can provide the research guidance for the electronic device based on multilayer MoS2 material.