Abstract
Probing dopant distributions in nanoscale devices may find important applications in failure analysis. In this work, we employed cryogenic electrostatic force microscopy (EFM) to probe the dopant distribution in a lateral nanoscale bipolar junction transistor formed by ion implantations. The photocurrent characteristics under light illumination show that the devices were made properly. The distributions of phosphorus and boron dopants are visible in the phase domain of EFM when the operating temperature is lowered to 130 K from room temperature. Numerical simulations show that the phase shifts for the doping regions are largely consistent with the experimental data.
Highlights
The functionality of semiconductor devices is essentially determined by dopants in the semiconductor.1,2 The dopant profile in lateral dimension confines the device structure
We employed cryogenic electrostatic force microscopy (EFM) to probe the dopant distribution in a lateral nanoscale bipolar junction transistor formed by ion implantations
The distributions of phosphorus and boron dopants are visible in the phase domain of EFM when the operating temperature is lowered to 130 K from room temperature
Summary
The functionality of semiconductor devices is essentially determined by dopants in the semiconductor.1,2 The dopant profile in lateral dimension confines the device structure. We employed cryogenic electrostatic force microscopy (EFM) to probe the dopant distribution in a lateral nanoscale bipolar junction transistor formed by ion implantations. We employ EFM to probe the junction doping profile in nanoscale pnp bipolar phototransistors (BPTs).
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