Abstract
In this study, the carrier recombination mechanism of Cr-doped CsPbCl3 is investigated by temperature-dependent photoluminescence (PL) and time-resolved PL (TR-PL). Because of non-uniform doping with Cr, exciton localization is observed. This behavior can be demonstrated not only by temperature-dependent PL, where emission intensity rapidly increases at a temperature of less than 100 K, but also by temperature-dependent TR-PL, where temperature dependency of the radiative lifetime exhibits a linear dependence at temperatures ranging from 20 K to 100 K. Furthermore, PL decay lifetimes of Cr-doped CsPbCl3 at 20 K as a function of monitored emission energies are investigated. Results reveal that the excitons of Cr-doped CsPbCl3 exhibit a large localization depth (Eloc). The methods employed herein are anticipated to open new avenues with immense characterization ability for examining the emission properties of inorganic lead trihalide perovskites.
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