Abstract
In order to probe the fundamental behaviors of point defects in silicon and germanium, we studied the self-diffusion using isotope superlattices. In ion-implanted germanium, vacancies are in thermal equilibrium and transient enhanced diffusion is not present under the experimental conditions employed in this study. In contrast, silicon self-interstitials are supersaturated in ion-implanted silicon and the self-interstitial concentration is going down to the thermal equilibrium value toward the surface.
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