Abstract
Electric field distribution in channel of pentacene field effect transistor (FET) was successfully probed by microscopic optical second-harmonic generation (SHG) observation. Microspot SHG signals were acquired at various points in the channel with scanning a spot position along source-drain direction. For the FET at off state, enhanced SHG signal was observed, indicating the Laplace field formation reflecting the device geometry. This clearly supports the insulating nature of pentacene layer at off state. After turning on the FET, SHG profile changed drastically, indicating change in the field distribution by the space charge formation in the channel due to the carrier injection.
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