Abstract
By using the electric field induced optical second-harmonic generation (EFISHG) measurements, we probed the transient electric field in a double-layer indium zinc oxide (IZO)/N, N′-di-[(1-naphthyl)-N,N′-diphenyl]-(1,1′-biphenyl)-4, 4′-diamine(α-NPD)/tris(8-hydroxy-quinolinato)aluminum(III) (Alq3)/Al electroluminescent (EL) diode. Results evidently showed that EL was initiated by the injected hole transport across α-NPD layer, and holes accumulated at the α-NPD/Alq3 interface while EL was enhanced. Analysis based on the Maxwell–Wagner effect model well accounted for the hole accumulation. EFISHG measurement is useful as a tool for probing carrier behavior in organic EL devices.
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