Abstract
Ballistic electron emission microscopy (BEEM) has been applied to probe the conduction band discontinuity, ΔE c, and its lateral variation at the heterojunction between relaxed InAs and GaAs. By combining BEEM threshold measurements with appropriate modelling of the interface a value of 0.72 eV is obtained for Δ E c . The lateral variation of the BEEM current partly reflects the topography of the overlayer.
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