Abstract
Abstract We have studied electron–electron (e–e) interactions in multilayer graphene grown on SiC(0001). We find that the observed logarithmic temperature (ln T) dependence of the Hall slope is a good physical quantity for probing e–e interactions since it is not affected by electron–phonon scattering at high temperatures. By subtracting the weak localization correction term, we are able to study e–e interactions independently. It is found that the interaction correction terms determined by two methods, which both show ln T dependences, agree better with each other in the high-temperature regime. Our approach is applicable to other two-dimensional materials which do not have buckled structures.
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