Probing Dark Current Random Telegraph Signal in a Small Pitch Vertically Pinned Photodiode CMOS Image Sensor After Proton Irradiation

Abstract

The dark current degradation and dark current random telegraph signal (DC-RTS) after proton irradiation are studied in new scale silicon microvolumes by using a commercial CMOS image sensor. Results show that previously reported empirical models describing the displacement damage-induced degradations are still valid despite the 10–100 times smaller depletion volume used. In addition, no evidence of significant total ionizing dose effects is observed. Finally, the reduction of the fraction of RTS pixels detected and the fraction of multilevel RTS pixels is directly linked to the reduction in pixel volume.