Abstract
Brillouin light scattering from silicon oxynitride films grown on GaAs reveals an excitation at frequencies lying below that of the Rayleigh surface wave. The mode, identified as a localized interfacial excitation, arises from the presence of a soft, thin transition layer between the film and substrate. The results are discussed in the framework of a Green’s function formalism that reproduces the experimental features and illustrates the nature of the mode and its difference from Stoneley excitations that exist in special cases for an abrupt interface separating two semi-infinite solid media. Observations of this low-frequency excitation offer a previously unexplored approach to characterize, nondestructively, the elastic properties of buried interfaces.
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