Probing carrier concentration of doped GaN single crystals from LO phonon-plasmon coupled modes

Abstract

Raman and infrared reflectance spectroscopy were used to study GaN single crystals with different doping types and carrier concentrations. In different samples, the characteristic spectra related to LO phonon-plasmon coupled (LOPC) mode are observed as changing regularly with carrier concentration. Furthermore, to obtain the carrier concentration and mobility of GaN crystals, Raman and infrared reflectance spectra with LOPC modes were fitted. The carrier concentration obtained agrees well with that obtained from the Hall measurement, which confirms that these non-contact and non-destructive spectroscopy methods with high spatial resolution are reliable to probe the carrier concentration of doped GaN single crystals.