Abstract
Small-angle x-ray scattering (SAXS) measurements have been performed to investigate the nanocavities/bubbles and the amorphous silicon surrounding the cavities/bubbles generated after high fluence medium-energy (60 keV) Ar ion implantation in single crystalline Si as a function of incidence angle (with respect to the surface normal of the sample). The measurements were carried out using a high flux/high transmission laboratory scale SAXS set up with Mo-Kα radiation in transmission geometry. The scattering data have been used to calculate the average size (Dave), number density (dN), and volume fraction (Vf) of cavities/bubbles in ion induced amorphous layer of the crystalline Si substrate. The novelty of the SAXS technique applied in the present case lies on its ability to detect ultrafine defect features of size even less than 1 nm, which is otherwise impossible from the transmission electron microscopy measurements usually employed for inert gas ion induced cavities/bubbles in amorphous silicon.
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