Probe shape measurement in an electron beam lithography system

Abstract

We have devised a method of quantifying the size and shape of the probe in a Gaussian-beam lithography system. The technique is robust, being insensitive to noise, but is sensitive to changes in the probe size of as little as ±0.5nm. We have determined that the probe shape of our system is indeed well fit by a Gaussian, with a best-focus full-width half-maximum of 6.5±1nm. We are able readily to quantify the effects of astigmatism on the system. In addition, the approach we describe can be extended to deal with arbitrary point-spread functions.