Abstract
Abstract In this work the CHF3 plasma in a commercial flat-bed reactor at 380 kHz frequency was investigated by means of Langmuir probe and double electrical probe techniques. It was observed that ion density increases with increasing pressure and rf current while electron temperature decreases. Values of Ne and Te were measured for typical process conditions. They varied between 0.5 × 109 and 2.5 × 109 cm−3 and 5−2 eV, respectively. A simplified model of the process in a CHF3 plasma is described. The relation between the equipment parameters (pressure, rf current) and plasma parameters (electron density and temperature, F -radical density) has been derived and related to the etch behaviour (etch rate, selectivity) of Si-based materials.
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