Abstract
We attempted to control the incorporation of twin boundaries in self-catalyzed GaAs nanowires (NWs). Self-catalyzed GaAs NWs were grown on a Si substrate under various arsenic pressures using molecular beam epitaxy and the vapor-liquid-solid method. When the arsenic flux is low, wurtzite structures are dominant in the GaAs NWs. On the other hand, zinc blende structures become dominant as the arsenic flux rises. We discussed this phenomenon on the basis of thermodynamics and examined the probability of twin-boundary formation in detail.
Highlights
III-V compound semiconductor nanowires (NWs) have been attracting significant attention as fundamental structures of novel optical and electronic devices
We succeeded in growing self-catalyzed gallium arsenide (GaAs) NWs on Si substrates using molecular beam epitaxy (MBE)-VLS method which is a combination of MBE and VLS method [3]
To control the twin boundaries, we focused on the pressure of arsenic because self-catalyzed GaAs NW growth was nearly independent of Ga pressure, and arsenic flux plays an important role in the growth mechanism [3]
Summary
III-V compound semiconductor nanowires (NWs) have been attracting significant attention as fundamental structures of novel optical and electronic devices. We succeeded in growing self-catalyzed GaAs NWs on Si substrates using molecular beam epitaxy (MBE)-VLS method which is a combination of MBE and VLS method [3]. The occurrence of twin boundaries is controlled by various methods such as control of supersaturation, growth temperature, and diameter [4,5,6,7,8]. To control the twin boundaries, we focused on the pressure of arsenic because self-catalyzed GaAs NW growth was nearly independent of Ga pressure, and arsenic flux plays an important role in the growth mechanism [3]. Arsenic solubility in Ga solution is very low [9]. This means that the degree of supersaturation depends on arsenic pressure only
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