Abstract

Soft errors, induced by radiations, have a growing impact on the reliability of CMOS integrated circuits. The progressive shrinking of device sizes in advanced technologies leads to miniaturization and performance improvements. However, ultra-deep sub-micron technologies are more vulnerable to soft errors. In this paper, we propose a new methodology to model and analyze Single Event Transients (SETs) propagation at RTL level. Gate level characterization libraries are utilized to model the underlying probabilistic behavior of SET pulse propagation as Probabilistic Automata (PA). A probabilistic model checker is adapted to analyze the probability of SET pulse propagation for all injection scenarios. Experimental results are presented for different combinational circuits. Our proposed methodology is orders of magnitude faster than contemporary techniques that can be used to analyze SET pulse propagation probability.

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