Printing of Quasi‐2D Semiconducting β‐Ga2O3 in Constructing Electronic Devices via Room‐Temperature Liquid Metal Oxide Skin

Abstract

Quasi‐2D β‐Ga2O3 is a rediscovered metal‐oxide semiconductor with the advantage of an ultrawide bandgap of 4.6–4.9 eV. It is reported to be a promising material for next‐generation power and radio‐frequency electronics. However, realizing macroelectronics based on β‐Ga2O3 film is challenging due to the nonuniformity and improper thickness of the film. Herein, a straightforward and rapid impact fabrication method for depositing high‐quality β‐Ga2O3 films is introduced. Structural and film properties of the deposited β‐Ga2O3 are characterized using scanning electron microscopy, X‐ray diffraction, and atomic force microscopy. To illustrate the applicability of the deposited β‐Ga2O3 in constructing electronic devices, β‐Ga2O3‐based field‐effect transistors (FETs) are fabricated with a source–drain spacing of 400 μm. Films of β‐Ga2O3 exhibit a good performance with carrier mobilities as high as 21.3 cm2 V–1 s–1, transconductances of 1.4 μS, and on/off current ratios of 104. The device performances indicate a big potential of β‐Ga2O3 for future power device applications. The method paves the way for future application of β‐Ga2O3 in electronics. It also provides a scalable approach for the integration of 2D morphologies of industrially important semiconductors into emerging electronics and optical devices.