Abstract
We report here an optically pumped hybrid III-V/Si photoic crystal surface emitting laser (PCSEL), consisting of a heterogeneously integrated III-V InGaAsP quantum well heterostructure gain medium, printed on a patterned defect-free Si photonic crystal (PC) bandedge cavity. Single mode lasing was achieved for a large area laser, with a side-mode suppression ratio of 28 dB, for lasing operation temperature ~200 K. Two types of lasers were demonstrated operating at different temperatures. Detailed modal analysis reveals the lasing mode matches with the estimated lasing gain threshold conditions. Our demonstration promises a hybrid laser sources on Si towards three-dimensional (3D) integrated Si photonics for on-chip wavelength-division multiplex (3D WDM) systems for a wide range of volume photonic/electronic applications in computing, communication, sensing, imaging, etc.
Highlights
Device design is based on the PCSEL principle by utilizing the bandedge modes in the vicinity of the second order Γ points[30]
These modes correspond to the Fano/guided resonance modes in the reflection or transmission spectra of the cold cavity
The cavity structure parameters are optimized by tuning these Fano resonance modes to match with the MQW emission peak
Summary
Surface-Emitting Lasers on Silicon received: 10 May 2015 accepted: 27 November 2015. Deyin Zhao1,*, Shihchia Liu1,*, Hongjun Yang[1], Zhenqiang Ma2, Carl Reuterskiöld-Hedlund[3], Mattias Hammar3 & Weidong Zhou[1]. The bandedge effect in defect-free photonic crystal structures, where the group velocity is close to zero, has advantages in achieving high performance semiconductor surface emitting lasers, including low lasing threshold, single longitudinal and transverse mode over a large lasing area, narrow linewidth, high power output, small beam divergence angle, polarization control, and output beam pattern control[18,21,22,23,24,25]. Based on the membrane transfer printing technique for heterogeneous integration of III-V with Si materials[26], we demonstrate printed large-area single-mode photonic bandedge lasers on Si. Different from the membrane lasers reported earlier[26], the structure reported here does not require a low index buffer layer to be placed in between the active region and the Si PC layer. With further optimization of the transfer printing process, and precise control of the interface quality, higher performance lasers are feasible
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