Abstract

Control of ionization processes with tailored femtosecond pulses is an important prerequisite for robust control of laser processing of high band gap materials. We make use of temporally asymmetric femtosecond pulses of identical fluence and identical pulse duration in order to control photo-ionization and electron-electron impact ionization. This results in observed different thresholds for material modification in fused silica as well as in reproducible lateral structures. Our strategy opens the route to develop tailored pulse shapes for controlled nanoscale material processing of dielectrics.

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