Abstract
The electrical properties of Al0.3Ga0.7As/InxGa1−xAs modulation doped heterostructures grown on GaAs substrates were studied. We found for the normal and inverted heterostructures principal differences of the transport properties. For an InAs mole fraction of 0.2 the inverted modulation doped heterostructures show a stronger decrease in the electron mobility of the two-dimensional electron gas if the critical layer thickness of the In0.2Ga0.8As layer is exceeded, in comparison to the normal heterostructures. This behavior can be explained by the relaxation process of the In0.2Ga0.8As layer. For InxGa1−xAs heterostructures with x≳0.3 the growth mode changes from two-dimensional to three-dimensional growth, which leads to interface roughness, degrading the transport properties of the normal heterostructure. Thus for high InAs mole fractions the inverted heterostructures show better transport properties in comparison to the normal heterostructures.
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