Abstract
At the nanoscale, local and accurate measurements of temperature are of particular relevance when testing quantum thermodynamical concepts or investigating novel thermal nanoelectronic devices. Here, we present a primary electron thermometer that allows probing the local temperature of a single-electron reservoir in single-electron devices. The thermometer is based on cyclic electron tunneling between a system with discrete energy levels and the reservoir. When driven at a finite rate, close to a charge degeneracy point, the system behaves like a variable capacitor whose full width at half maximum depends linearly with temperature. We demonstrate this type of thermometer using a quantum dot in a silicon nanowire transistor. We drive cyclic electron tunneling by embedding the device in a radio-frequency resonator which in turn allows reading the thermometer dispersively. Overall, the thermometer shows potential for local probing of fast heat dynamics in nanoelectronic devices and for seamless integration with silicon-based quantum circuits.
Highlights
At the nanoscale, local and accurate measurements of temperature are of particular relevance when testing quantum thermodynamical concepts or investigating novel thermal nanoelectronic devices
A common technique is based on the Johnson-Nyquist noise of a resistor[2] which can be used in combination with superconducting quantum interference devices to perform current-sensing noise thermometry (CSNT)[3]
We have described and demonstrated a novel primary electron thermometer based on cyclic electron tunneling that allows measuring the temperature of a single electron reservoir without the need of electrical transport
Summary
Local and accurate measurements of temperature are of particular relevance when testing quantum thermodynamical concepts or investigating novel thermal nanoelectronic devices. When driven at a finite rate, close to a charge degeneracy point, the system behaves like a variable capacitor whose full width at half maximum depends linearly with temperature We demonstrate this type of thermometer using a quantum dot in a silicon nanowire transistor. Recent advances in device nanoengineering have led to a focused interest in using concepts from quantum thermodynamics[17,18,19,20,21] to improve the efficiency of technologies such as the thermal diode[22,23] or thermal energy harvesters[24] In these nanoelectronic devices, determining the local temperature in different reservoirs of the device is of particular relevance but challenging from an experimental perspective. The thermometer is implemented in a complementarymetal-oxide-semiconductor (CMOS) transistor which makes it suitable for large-scale manufacturing and seamless integration with silicon-based quantum circuits, a promising platform for the implementation of a scalable quantum computer[25,26,27]
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
