Year-end Sale % OFF 
Abstract
Excitation with nanosecond-laser pulses at fluences well below the melt threshold removes Si dimers on the Si(001)-(2x1) surface and induces atomic-Si desorption through an electronic mechanism. The rate of this photoinduced reaction depends superlinearly on the excitation intensity, and is enhanced resonantly at the photon energy where the optical transition injects holes into the dimer backbond surface-band state. The results reveal the crucial role of surface holes and their nonlinear localization in the bond rupture of Si dimers on this surface.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
