Abstract
WSe2 thin films are obtained by annealing tungsten and selenium constituents in thin-film form, under selenium pressure. Thin films have been investigated by X-ray analysis, scanning and transmission electron microscopy, and by microprobe analysis. Annealing temperature and time were used as parameters. It is shown that stoichiometric thin films, crystallized in the hexagonal structure, are systematically obtained. The grain-size evolution with increasing temperature and/or annealing time is interpreted in terms of primary and second crystallization processes (crystallization and recrystallization).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
