Abstract
Effects of Se addition to the Ga melt were investigated during the liquid phase epitaxial (LPE) growth of GaAs on GaAs-coated Si substrates. It was observed that the addition of about 0.005 wt% Se to the Ga growth melt effectively suppressed dissolution of the GaAsSi substrates into the melt during the initial stage of the growth, which is the most serious problem in LPE growth of heteroepitaxial semiconductor layers. Results of preliminary defect analysis revealed formation of helical dislocations within the LPE layer, which indicates excess point defect concentration in the layer probably due to the heavy Se doping. No clear evidence of precipitation was observed.
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