Abstract
The growth of InGaN by Ga-migration-enhanced epitaxy using metalorganic chemical vapor deposition is reported. Trench defects, which are usually associated with the generation of basal-plane stacking faults (BSFs), can be significantly diminished by this method. The surface morphology and luminescence characteristics of the deposited InGaN are consequently improved. It is demonstrated that the Ga-migration-enhanced epitaxy can inhibit the generation of BSFs and thus prevent the formation of trench defects in InGaN epilayers.
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