Pressure-induced metallization in layered ReSe2

Abstract

The evolution of the crystal structure and electrical transport properties of distorted layered transition metal dichalcogenide ReSe2 was studied under high pressure up to ~90 GPa by Raman spectroscopy and electrical resistivity measurements accompanied by ab initio electronic band structure calculations. Raman spectroscopy studies indicate an isostructural phase transition due to layer sliding at ~7 GPa, to the distorted 1T-phase which remains stable up to the highest pressures employed in these experiments. From a direct band gap semiconductor at ambient pressure, ReSe2 undergoes pressure-induced metallization at pressures ~35 GPa, in agreement with the ab initio calculations. Resistivity measurements performed with different loading conditions reveal the possible emergence of superconductivity, which is most likely not an intrinsic property of ReSe2, but is rather conditioned by internal stresses upon compression.