Abstract
In this paper, the statistical moment method (SMM) has been developed to study the pressure dependence of thermodynamic quantities of germanium and silicon crystals. We have derived the analytical expressions of the pressure-dependent parallel mean-square relative displacement (MSRD) or extended X-ray absorption fine structure (EXAFS) Debye–Waller factor, mean-square displacement (MSD) as well as lattice constant and volume change of diamond-type crystals. Numerical calculations performed for these semiconductors up to 11 GPa are found to be in good and reasonable agreement with available experimental data as well as with previous theoretical studies. Our results indicate that the SMM can be efficiently used for determining the relative change of the pressure-dependent MSRDs of germanium and silicon semiconductors. The research also shows the advantage of SMM on studying other thermodynamic properties of materials under high pressures.
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