Abstract
The process development of a novel pressure-assist pates for high performance silicon carbide metal-oxide semiconductor field-effect transistor (SiC MOSFET) was carried out. In this study, high shear strength on silver sintered die attach layer can be achieved. Interconnect process developed for gate pad (pad size = 0.8mm x 0.5mm) and source pad (pad size= 1.04mmx3.97mm) with copper clips and tin antimony (SnSb) solder passed the criteria of power cycling test. Highly densify silver sintered layer can be achieved by pressure-laser sintering process for pressure-assist type silver sintering paste.
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